IXYP15N65C3
IGBT 650V 38A 200W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYP15N65C3 is a GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power applications. This PT IGBT features a 650 V breakdown voltage and a continuous collector current rating of 38 A, with a pulsed capability of 80 A. It offers a maximum power dissipation of 200 W and a low on-state voltage of 2.5 V at 15 V gate-emitter voltage and 15 A collector current. Switching characteristics include a gate charge of 19 nC and switching energies of 270 µJ (on) and 230 µJ (off) under specified test conditions (400 V, 15 A, 20 O, 15 V). The device operates across a wide temperature range of -55°C to 175°C and is packaged in a TO-220-3 through-hole configuration, supplied in tubes. This component is suitable for use in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/68ns |
| Switching Energy | 270µJ (on), 230µJ (off) |
| Test Condition | 400V, 15A, 20Ohm, 15V |
| Gate Charge | 19 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 200 W |
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