IXYS IXYP15N65B3D1 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This TO-220AB packaged device offers robust performance characteristics suitable for industrial power systems, motor drives, and renewable energy conversion. Its advanced trench gate technology ensures low on-state voltage drop (Vce(sat)) and fast switching speeds, contributing to improved system efficiency and reduced power dissipation. The IXYP15N65B3D1 is engineered for reliability in high-temperature environments and features a substantial current handling capability of 15A. This component is ideal for designers requiring efficient power management solutions in applications such as welding inverters, uninterruptible power supplies (UPS), and induction heating.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
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