IXYP10N65C3D1M
IGBT 650V 15A TO220 ISOL TABManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXYP10N65C3D1M is a 650 V, 15 A Insulated Gate Bipolar Transistor (IGBT) from the XPT™, GenX3™ series. This TO-220 Isolated Tab package component offers a maximum power dissipation of 53 W and a continuous collector current (Ic) of 15 A, with a pulsed collector current (Icm) of 50 A. Key electrical characteristics include a gate charge of 18 nC, a clamping voltage (Vce(on)) of 2.6V at 15V, 10A, and a reverse recovery time (trr) of 26 ns. Switching energy is specified at 240µJ (on) and 170µJ (off) under test conditions of 400V, 10A, 50 Ohm, 15V. The operating temperature range is -55°C to 175°C. This component is suitable for applications in power factor correction, switch mode power supplies, and motor control.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 26 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 10A |
| Supplier Device Package | TO-220 Isolated Tab |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/77ns |
| Switching Energy | 240µJ (on), 170µJ (off) |
| Test Condition | 400V, 10A, 50Ohm, 15V |
| Gate Charge | 18 nC |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 53 W |
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