IXYP10N65C3D1
IGBT PT 650V 30A TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™, XPT™ series IXYP10N65C3D1 is a 650V, 30A insulated gate bipolar transistor (IGBT) with a maximum power dissipation of 160W. This PT-type IGBT features a standard gate input and is supplied in a TO-220-3 package for through-hole mounting. Key electrical characteristics include a collector current of 30A (54A pulsed) and a Vce(on) of 2.5V at 15V gate-emitter voltage and 10A collector current. The device exhibits a gate charge of 18nC and switching energy values of 240µJ (on) and 110µJ (off) under test conditions of 400V, 10A, 50 Ohms, and 15V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in power factor correction, motor drives, and power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 170 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | TO-220 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/77ns |
| Switching Energy | 240µJ (on), 110µJ (off) |
| Test Condition | 400V, 10A, 50Ohm, 15V |
| Gate Charge | 18 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 54 A |
| Power - Max | 160 W |
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