IXYP10N65B3D1
IGBT PT 650V 32A TO220Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXYP10N65B3D1 is a 650V, 32A Trench IGBT from the XPT™, GenX3™ series, packaged in a TO-220-3 through-hole configuration. This device offers a maximum collector power dissipation of 160W and features a low Vce(on) of 1.95V at 10A and 15V gate drive. Key performance parameters include a collector current of 32A (62A pulsed), a gate charge of 20 nC, and switching energies of 300µJ (on) and 200µJ (off) under test conditions of 400V, 10A, 50 Ohm, and 15V. The typical turn-on delay (Td(on)) is 17ns, with a turn-off delay (Td(off)) of 125ns. This component is suitable for applications requiring high voltage and current switching, operating across an extended temperature range of -55°C to 175°C. Industries utilizing this device include industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 29 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 10A |
| Supplier Device Package | TO-220 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 17ns/125ns |
| Switching Energy | 300µJ (on), 200µJ (off) |
| Test Condition | 400V, 10A, 50Ohm, 15V |
| Gate Charge | 20 nC |
| Current - Collector (Ic) (Max) | 32 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 62 A |
| Power - Max | 160 W |
Request a Quote
Clients Also Buy
IXYN120N120C3
IGBT MOD 1200V 240A SOT227B
IXYN82N120C3
IGBT MOD 1200V 105A 500W SOT227B
IXXN200N60B3
IGBT MOD 600V 280A 940W SOT227B
