IXYN75N65C3D1
IGBT 650V 150A SOT227BManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYN75N65C3D1 is a 650V, 150A XPT™, GenX3™ series Insulated Gate Bipolar Transistor (IGBT) housed in a SOT-227B package. This chassis mount device offers a maximum continuous collector current of 150A and a pulsed collector current of 360A, supporting up to 600W of power dissipation. Key electrical characteristics include a typical gate charge of 122 nC and a Vce(on) of 2.3V at 15V Vge and 60A Ic. Switching performance is characterized by a turn-on delay of 26ns and turn-off delay of 93ns at 25°C, with a reverse recovery time of 65ns. Switching energy figures are 2mJ (on) and 950µJ (off) under test conditions of 400V, 60A, 3 Ohm, and 15V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-power applications in industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 65 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Supplier Device Package | SOT-227B |
| IGBT Type | - |
| Td (on/off) @ 25°C | 26ns/93ns |
| Switching Energy | 2mJ (on), 950µJ (off) |
| Test Condition | 400V, 60A, 3Ohm, 15V |
| Gate Charge | 122 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 360 A |
| Power - Max | 600 W |
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