IXYN50N170CV1
IGBT 1700V 120A SOT227BManufacturer: IXYS
Categories: Single IGBTs
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The IXYS XPT™ series IGBT, part number IXYN50N170CV1, is a high-performance power semiconductor device designed for demanding applications. This SOT-227B packaged IGBT features a 1700 V collector-emitter breakdown voltage and a continuous collector current capability of 120 A, with a pulsed current rating of 485 A. The device offers a maximum power dissipation of 880 W and a low on-state voltage of 3.7 V at 15 V gate-emitter voltage and 50 A collector current. With a gate charge of 260 nC and switching energies of 8.7 mJ (on) and 5.6 mJ (off) at 850 V, 50 A, 1 Ohm, 15 V, this IGBT ensures efficient power conversion. The 255 ns reverse recovery time and 22 ns / 236 ns turn-on/turn-off delays contribute to optimized switching performance. Operating across a wide temperature range of -55°C to 175°C (TJ), the IXYN50N170CV1 is suitable for applications in industrial motor drives, renewable energy systems, and power supply units.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 255 ns |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |
| Supplier Device Package | SOT-227B |
| IGBT Type | - |
| Td (on/off) @ 25°C | 22ns/236ns |
| Switching Energy | 8.7mJ (on), 5.6mJ (off) |
| Test Condition | 850V, 50A, 1Ohm, 15V |
| Gate Charge | 260 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 485 A |
| Power - Max | 880 W |
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