The IXYS IXYN150N60B3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the XPT™, GenX3™ series. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 250 A, with a pulsed current rating of 750 A. Designed for robust operation, it dissipates a maximum power of 830 W and operates across a wide temperature range of -55°C to 175°C. The gate charge is specified at 260 nC, and typical on-state voltage (Vce(on)) is 2.2 V at 15 V gate-emitter voltage and 150 A collector current. Switching characteristics include turn-on delay (Td(on)) of 27 ns and turn-off delay (Td(off)) of 167 ns at 25°C, with switching energies of 4.2 mJ (on) and 2.6 mJ (off). The IXYS IXYN150N60B3 is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting, and is provided in tube packaging. This device is commonly utilized in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 88 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 150A |
| Supplier Device Package | SOT-227B |
| IGBT Type | - |
| Td (on/off) @ 25°C | 27ns/167ns |
| Switching Energy | 4.2mJ (on), 2.6mJ (off) |
| Test Condition | 400V, 75A, 2Ohm, 15V |
| Gate Charge | 260 nC |
| Current - Collector (Ic) (Max) | 250 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 750 A |
| Power - Max | 830 W |
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