IXYN120N65C3D1
IGBT PT 650V 190A SOT227BManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXYN120N65C3D1 is a GenX3™, XPT™ series insulated gate bipolar transistor (IGBT) featuring a 650V collector-emitter breakdown voltage and a continuous collector current capability of 190A. This PT IGBT utilizes a standard input type and is housed in a SOT-227B (miniBLOC) package, designed for chassis mounting. With a maximum power dissipation of 830W and a maximum junction temperature of 175°C, it is well-suited for demanding applications. Key performance characteristics include a Vce(on) of 2.8V at 15V gate-source voltage and 100A collector current, a gate charge of 265 nC, and a reverse recovery time of 29 ns. Switching energy at 400V and 50A is specified at 1.25mJ (turn-on) and 500µJ (turn-off), with turn-on and turn-off delays of 28ns and 127ns respectively at 25°C. This component is widely employed in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 29 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 100A |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/127ns |
| Switching Energy | 1.25mJ (on), 500µJ (off) |
| Test Condition | 400V, 50A, 2Ohm, 15V |
| Gate Charge | 265 nC |
| Current - Collector (Ic) (Max) | 190 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 620 A |
| Power - Max | 830 W |
Request a Quote
Clients Also Buy
IXXH50N60B3D1
IGBT 600V 120A 600W TO247
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXYK120N120C3
IGBT 1200V 240A 1500W TO264
