IXYN120N65B3D1
IGBT PT 650V 250A SOT227BManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™, XPT™ series IXYN120N65B3D1 is a 650V, 250A Insulated Gate Bipolar Transistor (IGBT) in a SOT-227B package. This PT IGBT features a maximum power dissipation of 830W and a collector-emitter voltage of 650V. It offers a continuous collector current of 250A, with a pulsed capability of 770A. Key switching parameters include a gate charge of 250 nC, a reverse recovery time of 28 ns, and switching energies of 1.34mJ (on) and 1.5mJ (off) under test conditions of 400V, 50A, 2Ohm, and 15V. The on-state voltage drop (Vce(on)) is a maximum of 1.9V at 15V gate-emitter voltage and 100A collector current. Operating temperature ranges from -55°C to 175°C. This component is chassis mountable and suitable for applications in industrial power conversion, motor drives, and high-voltage switching systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 100A |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/168ns |
| Switching Energy | 1.34mJ (on), 1.5mJ (off) |
| Test Condition | 400V, 50A, 2Ohm, 15V |
| Gate Charge | 250 nC |
| Current - Collector (Ic) (Max) | 250 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 770 A |
| Power - Max | 830 W |
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