IXYN110N120A4
IGBT PT 1200V 275A SOT227BManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYN110N120A4 is a high-performance IGBT from the XPT™, GenX4™ series. This Trench IGBT features a 1200V collector-emitter breakdown voltage and supports a continuous collector current of 275A, with a pulsed current capability of 950A. The device offers a low on-state voltage of 1.8V at 15V gate-emitter voltage and 110A collector current, specified with a gate charge of 305 nC. With a maximum power dissipation of 830W and switching energy figures of 2.5mJ (on) and 8.4mJ (off) under test conditions of 600V, 50A, 2 Ohm, and 15V, it is suitable for demanding applications. The IXYN110N120A4 utilizes the SOT-227B (miniBLOC) package for chassis mounting, ensuring robust thermal management across its operating temperature range of -55°C to 175°C. This component is widely employed in industrial motor drives, renewable energy systems, and high-power switching applications.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 110A |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 42ns/550ns |
| Switching Energy | 2.5mJ (on), 8.4mJ (off) |
| Test Condition | 600V, 50A, 2Ohm, 15V |
| Gate Charge | 305 nC |
| Current - Collector (Ic) (Max) | 275 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 950 A |
| Power - Max | 830 W |
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