The IXYS XPT™, GenX3™ series IXYK200N65B3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current capability of 410 A, with a pulsed capability of 1100 A. With a maximum power dissipation of 1560 W, it is suitable for high-power switching in industrial motor drives, power supplies, and renewable energy systems. The device boasts a low on-state voltage of 1.7 V at 100 A and 15 V gate drive, with typical switching times of 60 ns turn-on and 370 ns turn-off at 25°C. The TO-264 package facilitates efficient heat dissipation for robust operation across an extended temperature range of -55°C to 175°C junction temperature. Its standard input type and through-hole mounting simplify integration into existing designs.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 108 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
| Supplier Device Package | TO-264 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 60ns/370ns |
| Switching Energy | 5mJ (on), 4mJ (off) |
| Test Condition | 400V, 100A, 0Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 410 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 1100 A |
| Power - Max | 1560 W |
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