IXYK180N65A5
650V, 180A, XP Gen5 A5 IGBT inManufacturer: IXYS
Categories: Single IGBTs
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The IXYS Gen5 XPT™ IXYK180N65A5 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 400A, with a pulsed current rating of 1.03kA. The IGBT type is Trench Field Stop, offering efficient switching characteristics with a typical on-state voltage of 1.35V at 15V gate drive and 100A collector current. Key switching parameters include a gate charge of 654nC and switching energies of 420µJ (on) and 4.1mJ (off) at test conditions of 300V and 100A. The maximum power dissipation is 1150W. This component utilizes a TO-264 package for through-hole mounting and is rated for operation across a temperature range of -55°C to 175°C. It is commonly employed in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: Gen5 XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 100A |
| Supplier Device Package | TO-264 (IXYK) |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 70ns/500ns |
| Switching Energy | 420µJ (on), 4.1mJ (off) |
| Test Condition | 300V, 100A, 2Ohm, 15V |
| Gate Charge | 654 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 400 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 1.03 kA |
| Power - Max | 1150 W |
| Qualification | - |
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