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IXYK140N90C3

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IXYK140N90C3

IGBT 900V 310A 1630W TO264

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYK140N90C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series, designed for demanding power conversion applications. This TO-264 packaged device offers a robust 900V collector-emitter breakdown voltage and a continuous collector current capability of 310A, with a pulsed capability of 840A. The IXYK140N90C3 features a maximum power dissipation of 1630W and a low on-state voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 140A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 40ns and turn-off delay (Td(off)) of 145ns at 25°C, with associated switching energies of 4.3mJ (on) and 4mJ (off) under test conditions of 450V, 100A, 1 Ohm, and 15V. With a wide operating temperature range of -55°C to 175°C, this component is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems. The device is provided in a TO-264-3, TO-264AA package.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 140A
Supplier Device PackageTO-264 (IXYK)
IGBT Type-
Td (on/off) @ 25°C40ns/145ns
Switching Energy4.3mJ (on), 4mJ (off)
Test Condition450V, 100A, 1Ohm, 15V
Gate Charge330 nC
Current - Collector (Ic) (Max)310 A
Voltage - Collector Emitter Breakdown (Max)900 V
Current - Collector Pulsed (Icm)840 A
Power - Max1630 W

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