IXYK120N120C3
IGBT 1200V 240A 1500W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYK120N120C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 240 A, with a pulsed capability of 700 A. Designed for demanding applications, it offers a maximum power dissipation of 1500 W. The device exhibits a low on-state voltage of 3.2 V at 120 A and 15 V gate drive, with a gate charge of 412 nC. Switching characteristics include turn-on delay (Td(on)) of 35 ns and turn-off delay (Td(off)) of 176 ns at 25°C, with switching energies of 6.75 mJ (on) and 5.1 mJ (off) under test conditions of 600 V, 100 A, 1 Ohm, and 15 V. Operating across an extended temperature range of -55°C to 175°C (TJ), this through-hole component is housed in a TO-264-3, TO-264AA package, suitable for power conversion and motor drive applications.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 120A |
| Supplier Device Package | TO-264 (IXYK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 35ns/176ns |
| Switching Energy | 6.75mJ (on), 5.1mJ (off) |
| Test Condition | 600V, 100A, 1Ohm, 15V |
| Gate Charge | 412 nC |
| Current - Collector (Ic) (Max) | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 700 A |
| Power - Max | 1500 W |
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