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IXYK120N120B3

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IXYK120N120B3

DISC IGBT XPT-GENX3 TO-264(3)

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYK120N120B3 is a discrete IGBT from the XPT™, GenX3™ series, featuring a 1200V collector-emitter breakdown voltage. This device offers a continuous collector current of 320A (800A pulsed) with a maximum power dissipation of 1500W. The IGBT utilizes a standard input type and boasts a low on-state voltage of 2.2V at 15V gate-emitter voltage and 100A collector current. Key switching characteristics include a gate charge of 400 nC, a reverse recovery time of 54 ns, and switching energies of 9.7mJ (turn-on) and 21.5mJ (turn-off) under specified test conditions. The IXYK120N120B3 is housed in a TO-264-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C. This component is prevalent in high-power applications such as industrial motor drives and power supplies.

Additional Information

Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)54 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
Supplier Device PackageTO-264 (IXYK)
IGBT TypePT
Td (on/off) @ 25°C30ns/340ns
Switching Energy9.7mJ (on), 21.5mJ (off)
Test Condition960V, 100A, 1Ohm, 15V
Gate Charge400 nC
Current - Collector (Ic) (Max)320 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)800 A
Power - Max1500 W

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