IXYK110N120B4
IGBT 1200V 110A GEN4 XPT TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYK110N120B4 is a Generation 4 XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-264 package, offers a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current of 340 A. With a maximum pulsed collector current of 800 A and a power dissipation of 1360 W, it is suited for demanding power conversion tasks. Key electrical characteristics include a low on-state voltage of 2.1V at 15V gate-emitter voltage and 110A collector current, and a typical gate charge of 340 nC. Switching performance is demonstrated by turn-on delay of 45ns and turn-off delay of 390ns at 25°C, with a reverse recovery time of 50 ns. This device is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| Supplier Device Package | TO-264 (IXYK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 45ns/390ns |
| Switching Energy | 3.6mJ (on), 3.85mJ (off) |
| Test Condition | 600V, 50A, 2Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 340 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 800 A |
| Power - Max | 1360 W |
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