IXYK110N120A4
IGBT 1200V 110A GENX4 XPT TO-264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXYK110N120A4 is a Trench IGBT from the XPT™, GenX4™ series. This Power Transistor (PT) IGBT features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 375 A, with a pulsed current capability of 900 A. The device offers a maximum power dissipation of 1360 W. Key switching characteristics include a gate charge of 305 nC and switching energies of 2.5 mJ (on) and 8.4 mJ (off) under test conditions of 600V, 50A, 1.5 Ohm, and 15V. The on-state voltage (Vce(on)) is 1.8 V at 15V gate-emitter voltage and 110A collector current. The IXYK110N120A4 is housed in a TO-264-3, TO-264AA package for through-hole mounting and operates within an extended temperature range of -55°C to 175°C. This component is suitable for applications in high-power switching, motor drives, and industrial power supplies.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 110A |
| Supplier Device Package | TO-264 (IXYK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 42ns/550ns |
| Switching Energy | 2.5mJ (on), 8.4mJ (off) |
| Test Condition | 600V, 50A, 1.5Ohm, 15V |
| Gate Charge | 305 nC |
| Current - Collector (Ic) (Max) | 375 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 900 A |
| Power - Max | 1360 W |
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