IXYK100N120C3
IGBT 1200V 188A 1150W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYK100N120C3 is a high-performance GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 188 A, with a pulsed current rating of 490 A. The device offers a maximum power dissipation of 1150 W and a low on-state voltage of 3.5 V at 15 V gate-emitter voltage and 100 A collector current. Switching characteristics include a gate charge of 270 nC and typical turn-on and turn-off delays of 32 ns and 123 ns, respectively, at 25°C. Packaged in a TO-264 (IXYK) through-hole configuration, it operates within a temperature range of -55°C to 175°C. This IGBT is suitable for industrial applications such as power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 100A |
| Supplier Device Package | TO-264 (IXYK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 32ns/123ns |
| Switching Energy | 6.5mJ (on), 2.9mJ (off) |
| Test Condition | 600V, 100A, 1Ohm, 15V |
| Gate Charge | 270 nC |
| Current - Collector (Ic) (Max) | 188 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 490 A |
| Power - Max | 1150 W |
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