IXYJ20N120C3D1
IGBT 1200V 21A 105W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYJ20N120C3D1 is a high-performance GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT). This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 21 A, with a pulsed collector current capability of 84 A. Designed for demanding applications, it offers a low on-state voltage of 3.4 V at 20 A and 15 V gate drive. The device boasts a maximum power dissipation of 105 W and a collector-emitter saturation voltage (Vce(on)) of 3.4V @ 15V, 20A. Switching characteristics include turn-on delay (Td(on)) of 20 ns and turn-off delay (Td(off)) of 90 ns at 25°C, with switching energy figures of 1.3 mJ (on) and 500 µJ (off). The reverse recovery time (trr) is 195 ns. This IGBT is housed in a TO-247-3 package, identified as ISO247 by the supplier, for through-hole mounting. It operates across a wide temperature range of -55°C to 150°C. Applications include power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 195 ns |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | ISO247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/90ns |
| Switching Energy | 1.3mJ (on), 500µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 21 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 84 A |
| Power - Max | 105 W |
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