IXYH90N65A5
IGBT PT 650V 220A TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH90N65A5 is a 650 V, 220 A Trench IGBT (Insulated Gate Bipolar Transistor) from the XPT™, GenX5™ series. This device features a high power dissipation capability of 650 W and is housed in a standard TO-247-3 package for through-hole mounting. Key parameters include a collector-emitter on-voltage (Vce(on)) of 1.35 V at 15 V gate-emitter voltage (Vge) and 60 A collector current (Ic), with a gate charge of 260 nC. Switching characteristics at 400 V, 50 A, 5 Ohm, and 15 V indicate turn-on delay (Td(on)) of 40 ns and turn-off delay (Td(off)) of 420 ns, with corresponding energies of 1.3 mJ (on) and 3.4 mJ (off). This component is suitable for applications in power conversion, motor drives, and industrial power systems, operating within a junction temperature range of -55°C to 175°C.
Additional Information
Series: XPT™, GenX5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 60A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 40ns/420ns |
| Switching Energy | 1.3mJ (on), 3.4mJ (off) |
| Test Condition | 400V, 50A, 5Ohm, 15V |
| Gate Charge | 260 nC |
| Current - Collector (Ic) (Max) | 220 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 650 W |
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