IXYH85N120A4
IGBT GENX4 1200V 85A TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH85N120A4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 300A, with a pulsed capability of 520A. Optimized for efficiency, it offers a low on-state voltage of 1.8V at 15V gate-emitter voltage and 85A collector current. The IXYH85N120A4 boasts a maximum power dissipation of 1150W and exhibits switching energies of 4.9mJ (on) and 8.3mJ (off) under typical test conditions (600V, 60A, 5 Ohm, 15V). Its standard input type and a gate charge of 200 nC facilitate straightforward integration into power switching circuits. The TO-247-3 package ensures robust thermal performance and ease of mounting via its through-hole configuration. This component is suitable for use in industrial motor drives, power supplies, and renewable energy systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 85A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 40ns/400ns |
| Switching Energy | 4.9mJ (on), 8.3mJ (off) |
| Test Condition | 600V, 60A, 5Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 300 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 520 A |
| Power - Max | 1150 W |
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