IXYH82N120C3
IGBT 1200V 200A 1250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ series IGBT, part number IXYH82N120C3. This high-performance insulated gate bipolar transistor features a collector-emitter voltage (Vce) breakdown of 1200 V and a continuous collector current (Ic) rating of 200 A. The device offers a maximum power dissipation of 1250 W and a pulsed collector current (Icm) of 380 A. Key switching characteristics include an on-state voltage (Vce(on)) of 3.2 V at 15 V gate-emitter voltage and 82 A collector current, with switching energies of 4.95 mJ (turn-on) and 2.78 mJ (turn-off) at 600 V, 80 A, 2 Ohm, 15 V. The gate charge is specified at 215 nC. Designed for through-hole mounting in a TO-247-3 package, this IGBT operates across a temperature range of -55°C to 175°C. Applications include industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 82A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 29ns/192ns |
| Switching Energy | 4.95mJ (on), 2.78mJ (off) |
| Test Condition | 600V, 80A, 2Ohm, 15V |
| Gate Charge | 215 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 380 A |
| Power - Max | 1250 W |
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