IXYH80N90C3
IGBT 900V 165A 830W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™, XPT™ series IXYH80N90C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a maximum collector-emitter voltage of 900 V and a continuous collector current of 165 A, with a pulsed current capability of 360 A. The IXYH80N90C3 offers a low on-state voltage of 2.7 V at 15 V gate-emitter voltage and 80 A collector current, with typical switching times of 34 ns turn-on and 90 ns turn-off. It dissipates a maximum power of 830 W and operates across a wide temperature range from -55°C to 175°C. The through-hole TO-247-3 package, identified as TO-247 (IXTH) by the supplier, facilitates robust mounting. This IGBT is suitable for use in power supply applications, motor drives, and industrial power conversion systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 80A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 34ns/90ns |
| Switching Energy | 4.3mJ (on), 1.9mJ (off) |
| Test Condition | 450V, 80A, 2Ohm, 15V |
| Gate Charge | 145 nC |
| Current - Collector (Ic) (Max) | 165 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 360 A |
| Power - Max | 830 W |
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