IXYH75N65C3H1
IGBT 650V 170A 750W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ series IGBT, part number IXYH75N65C3H1. This Trench Field Stop (TFS) IGBT offers a 650 V collector-emitter breakdown voltage and a continuous collector current capability of 170 A (360 A pulsed). With a maximum power dissipation of 750 W and a low on-state voltage of 2.3 V at 60 A and 15 V gate drive, this device is designed for efficient power switching. Key parameters include a gate charge of 123 nC, switching energies of 2.8 mJ (on) and 1 mJ (off) under test conditions of 400 V, 60 A, 3 Ohm, 15 V. Reverse recovery time is specified at 150 ns. The device operates across a wide temperature range of -55°C to 175°C. Packaged in a TO-247-3 through-hole configuration, this IGBT is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 150 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 27ns/93ns |
| Switching Energy | 2.8mJ (on), 1mJ (off) |
| Test Condition | 400V, 60A, 3Ohm, 15V |
| Gate Charge | 123 nC |
| Current - Collector (Ic) (Max) | 170 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 360 A |
| Power - Max | 750 W |
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