IXYH75N65C3D1
IGBT PT 650V 175A TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH75N65C3D1 is a high-performance XPT™, GenX3™ series N-channel Trench IGBT designed for demanding power switching applications. This component offers a 650V collector-emitter breakdown voltage and a continuous collector current rating of 175A, with a pulsed capability of 360A. It features a low on-state voltage (Vce(on)) of 2.3V at 15V gate-source voltage and 60A collector current, along with a maximum power dissipation of 750W. Key switching parameters include a typical turn-on delay (Td(on)) of 26ns and turn-off delay (Td(off)) of 93ns at 25°C, with a reverse recovery time (trr) of 65ns. The gate charge is specified at 122nC. This device is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within an extended temperature range of -55°C to 175°C. Applications include industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 65 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 26ns/93ns |
| Switching Energy | 2mJ (on), 950µJ (off) |
| Test Condition | 400V, 60A, 3Ohm, 15V |
| Gate Charge | 122 nC |
| Current - Collector (Ic) (Max) | 175 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 360 A |
| Power - Max | 750 W |
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