IXYH75N65C3
IGBT 650V 170A 750W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH75N65C3 is a high-performance PT IGBT from the GenX3™, XPT™ series, designed for demanding power applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 170A, with a pulsed capability of 360A. The Vce(on) is specified at a maximum of 2.3V at 15V gate-emitter voltage and 60A collector current. With a maximum power dissipation of 750W and a typical switching energy of 2.8mJ on and 1mJ off, it is well-suited for applications such as industrial motor drives, electric vehicle powertrains, and uninterruptible power supplies. The TO-247-3 package facilitates through-hole mounting and operates across a wide temperature range of -55°C to 175°C. Gate charge is 123 nC.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 27ns/93ns |
| Switching Energy | 2.8mJ (on), 1mJ (off) |
| Test Condition | 400V, 60A, 3Ohm, 15V |
| Gate Charge | 123 nC |
| Current - Collector (Ic) (Max) | 170 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 360 A |
| Power - Max | 750 W |
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