IXYH60N65A5
650V, 60A, XPT Gen5 A5 IGBT inManufacturer: IXYS
Categories: Single IGBTs
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The IXYS Gen5 XPT™ IXYH60N65A5 is a Trench Field Stop Insulated Gate Bipolar Transistor designed for high-power applications. This component offers a 650V collector-emitter breakdown voltage and a continuous collector current capability of 134A, with a pulsed current rating of 260A. It features a low on-state voltage (Vce(on)) of 1.35V at 15V gate-source voltage and 36A collector current, contributing to reduced conduction losses. The device exhibits switching characteristics with turn-on delay of 28ns and turn-off delay of 230ns at 25°C, with associated switching energies of 600µJ (on) and 1.45mJ (off) under test conditions of 400V, 36A, 5 Ohm load, and 15V gate drive. With a maximum power dissipation of 395W and an operating junction temperature range of -55°C to 175°C, the IXYH60N65A5 is housed in a TO-247-3 package, suitable for through-hole mounting. This IGBT is commonly utilized in power factor correction, uninterruptible power supplies, and industrial motor drives.
Additional Information
Series: Gen5 XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 36A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 28ns/230ns |
| Switching Energy | 600µJ (on), 1.45mJ (off) |
| Test Condition | 400V, 36A, 5Ohm, 15V |
| Gate Charge | 128 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 134 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 260 A |
| Power - Max | 395 W |
| Qualification | - |
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