IXYH55N120C4
IGBT 1200V 140A TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS XPT™ series IGBT, part number IXYH55N120C4, is a high-performance discrete power semiconductor designed for demanding applications. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 140 A, with a pulsed capability of 290 A. The IGBT offers a maximum power dissipation of 650 W and a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-source voltage and 55 A collector current. Key switching characteristics include a gate charge of 114 nC, typical turn-on delay (Td(on)) of 20 ns, and turn-off delay (Td(off)) of 180 ns at 25°C, with a reverse recovery time (trr) of 50 ns. Switching energy is rated at 3.5 mJ for turn-on and 1.34 mJ for turn-off under specified test conditions (600 V, 40 A, 5 Ohm, 15 V). The IXYH55N120C4 is housed in a TO-247-3 package, suitable for through-hole mounting and operating across a wide temperature range of -55°C to 175°C. This component finds utility in power supply, motor drive, and industrial automation sectors.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 55A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/180ns |
| Switching Energy | 3.5mJ (on), 1.34mJ (off) |
| Test Condition | 600V, 40A, 5Ohm, 15V |
| Gate Charge | 114 nC |
| Current - Collector (Ic) (Max) | 140 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 290 A |
| Power - Max | 650 W |
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