IXYH50N65C3H1
IGBT 650V 130A 600W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH50N65C3H1 is a 650V, 130A N-channel Power Transistor IGBT from the GenX3™, XPT™ series. This through-hole component, packaged in a TO-247-3, offers a continuous collector current (Ic) of 130A and a pulsed collector current (Icm) of 250A. It features a maximum power dissipation of 600W and a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 36A collector current. Switching characteristics include a gate charge of 80 nC, a reverse recovery time (trr) of 120 ns, and switching energy values of 1.3mJ (on) and 370µJ (off) under test conditions of 400V, 36A, 5 Ohm, 15V. The operating temperature range is -55°C to 175°C. This device is suitable for applications in high-power switching power supplies, motor drives, and induction heating.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 120 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 36A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 22ns/80ns |
| Switching Energy | 1.3mJ (on), 370µJ (off) |
| Test Condition | 400V, 36A, 5Ohm, 15V |
| Gate Charge | 80 nC |
| Current - Collector (Ic) (Max) | 130 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 600 W |
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