IXYH50N65C3D1
IGBT 650V 132A TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™, GenX3™ IXYH50N65C3D1 is a 650 V, 132 A insulated gate bipolar transistor (IGBT) designed for high-power applications. This through-hole device, packaged in a TO-247-3, offers a maximum power dissipation of 600 W and a continuous collector current of 132 A, with a pulsed current capability of 250 A. The IGBT features a low on-state voltage (Vce(on)) of 2.1V at 15V Vge and 36A Ic, and a gate charge of 86 nC. Switching characteristics include a reverse recovery time (trr) of 36 ns and switching energies of 800µJ (on) and 800µJ (off) under test conditions of 400V, 36A, 5 Ohm, 15V. Operating temperature range is from -55°C to 175°C. This component is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 36 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 36A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/90ns |
| Switching Energy | 800µJ (on), 800µJ (off) |
| Test Condition | 400V, 36A, 5Ohm, 15V |
| Gate Charge | 86 nC |
| Current - Collector (Ic) (Max) | 132 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 600 W |
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