IXYH50N120C3D1
IGBT 1200V 90A TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH50N120C3D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This device offers a collector-emitter voltage rating of 1200V and a continuous collector current of 90A, with a pulsed capability of up to 210A. Designed for demanding applications, it features a maximum power dissipation of 625W and a low on-state voltage drop of 4V at 15V gate-emitter voltage and 50A collector current. The IGBT exhibits a gate charge of 142 nC, with typical switching times of 28ns turn-on and 133ns turn-off at 25°C, and a reverse recovery time of 195ns. Its switching energy is rated at 3mJ for turn-on and 1mJ for turn-off under test conditions of 600V, 50A, 5 Ohm, and 15V. Packaged in a TO-247-3 configuration for through-hole mounting, this component operates across a temperature range of -55°C to 150°C (TJ). This IGBT is suitable for power conversion systems in industries such as industrial motor drives and renewable energy.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 195 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 50A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 28ns/133ns |
| Switching Energy | 3mJ (on), 1mJ (off) |
| Test Condition | 600V, 50A, 5Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 210 A |
| Power - Max | 625 W |
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