IXYH50N120C3
IGBT 1200V 100A TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ series IXYH50N120C3 is a robust Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 100 A at a case temperature of 100°C, with a pulsed current capability of 240 A. The device exhibits a maximum on-state voltage (Vce(on)) of 3.5 V at 15 V gate-emitter voltage and 50 A collector current. Switching characteristics include turn-on delay (Td(on)) of 28 ns and turn-off delay (Td(off)) of 133 ns at 25°C, with switching energies of 3 mJ (on) and 1 mJ (off) under test conditions of 600 V, 50 A, 5 Ohm, and 15 V. With a maximum power dissipation of 750 W and an operating temperature range of -55°C to 175°C (TJ), the IXYH50N120C3 is suitable for demanding industrial power conversion, motor drives, and power supply applications. It is supplied in a TO-247-3 package for through-hole mounting.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 50A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 28ns/133ns |
| Switching Energy | 3mJ (on), 1mJ (off) |
| Test Condition | 600V, 50A, 5Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 750 W |
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