IXYH40N90C3D1
IGBT 900V 90A TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ series IXYH40N90C3D1 is a 900V, 90A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a maximum collector current of 90A and a pulsed collector current of 180A. With a Vce(on) of 2.5V at 15V and 40A, it offers efficient switching. The gate charge is 74 nC, and the switching energy is 1.9mJ (on) and 1mJ (off) under test conditions of 450V, 40A, 5 Ohm, 15V. The IXYH40N90C3D1 has a maximum power dissipation of 500W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-247-3 through-hole configuration, this IGBT is suitable for industries requiring robust power conversion solutions.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 27ns/78ns |
| Switching Energy | 1.9mJ (on), 1mJ (off) |
| Test Condition | 450V, 40A, 5Ohm, 15V |
| Gate Charge | 74 nC |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 500 W |
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