IXYH40N90C3
IGBT 900V 105A 600W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH40N90C3 is a high-performance GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 900 V collector-emitter breakdown voltage and a continuous collector current (Ic) capability of 105 A, with a pulsed capability (Icm) of 200 A. It offers a maximum power dissipation of 600 W and a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-source voltage and 40 A collector current. Switching characteristics include typical on-state switching energy of 1.9 mJ and off-state switching energy of 1 mJ, with turn-on delay (Td(on)) of 27 ns and turn-off delay (Td(off)) of 78 ns at 25°C. The device is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This IGBT is suitable for use in industrial motor drives, power supplies, and other high-power switching applications.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 27ns/78ns |
| Switching Energy | 1.9mJ (on), 1mJ (off) |
| Test Condition | 450V, 40A, 5Ohm, 15V |
| Gate Charge | 74 nC |
| Current - Collector (Ic) (Max) | 105 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 600 W |
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