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IXYH40N65C3D1

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IXYH40N65C3D1

IGBT PT 650V 80A TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS GenX3™, XPT™ Series IGBT PT, part number IXYH40N65C3D1, offers a 650 V collector-emitter breakdown voltage and an 80 A continuous collector current. This through-hole component in a TO-247-3 package features a maximum power dissipation of 300 W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a 2.35 V (max) collector-emitter saturation voltage at 15 V gate-emitter voltage and 40 A collector current. The device exhibits a gate charge of 66 nC and specified switching energy values of 830 µJ (on) and 360 µJ (off) under test conditions of 400 V, 30 A, 10 O, and 15 V. Typical on and off delay times at 25°C are 23 ns and 110 ns, respectively. This IGBT is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)120 ns
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 40A
Supplier Device PackageTO-247 (IXTH)
IGBT TypePT
Td (on/off) @ 25°C23ns/110ns
Switching Energy830µJ (on), 360µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge66 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)180 A
Power - Max300 W

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