The IXYS IXYH40N65B3D1 is a 650V, 86A through-hole Insulated Gate Bipolar Transistor (IGBT) from the XPT™, GenX3™ series. This device features a maximum collector power dissipation of 300W and a continuous collector current of 86A, with a pulsed capability of 195A. The ON-state voltage (Vce(on)) is a maximum of 2V at 15V Vge and 40A Ic. Key switching characteristics include a gate charge of 68 nC, turn-on delay (Td(on)) of 20ns, and turn-off delay (Td(off)) of 140ns, both specified at 25°C with a test condition of 400V, 30A, 10 Ohm, and 15V. Switching energy is rated at 800µJ for turn-on and 1.25mJ for turn-off. The IGBT operates within an extended temperature range of -55°C to 175°C (TJ) and is housed in a TO-247-3 package. This component is suitable for applications in power conversion and motor control systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/140ns |
| Switching Energy | 800µJ (on), 1.25mJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 86 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 195 A |
| Power - Max | 300 W |
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