IXYH40N120C4
IGBT DISCRETE TO-247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH40N120C4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the XPT™, GenX4™ series, designed for demanding power applications. This discrete IGBT features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 120 A, with a pulsed capability of 230 A. The device offers a maximum power dissipation of 680 W and a low on-state voltage of 2.5 V at 15 V gate-emitter voltage and 32 A collector current. Key switching characteristics include a gate charge of 92 nC and optimized switching energies of 5.55 mJ (on) and 1.55 mJ (off) under specified test conditions. The IXYH40N120C4 is housed in a standard TO-247-3 through-hole package, suitable for robust thermal management. This component finds extensive use in industrial motor drives, power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 32A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 21ns/140ns |
| Switching Energy | 5.55mJ (on), 1.55mJ (off) |
| Test Condition | 960V, 32A, 5Ohm, 15V |
| Gate Charge | 92 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 230 A |
| Power - Max | 680 W |
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