IXYH40N120C3
IGBT 1200V 70A 577W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH40N120C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series, designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 70A, with a pulsed capability of 115A. The maximum power dissipation is 577W. Key electrical characteristics include a Vce(on) of 4V at 15V gate-emitter voltage and 40A collector current. Switching performance is characterized by a gate charge of 85 nC and switching energies of 3.9mJ (on) and 660µJ (off) under specified test conditions (600V, 40A, 10 Ohm, 15V). The device operates within a temperature range of -55°C to 175°C. Packaged in a TO-247-3 through-hole configuration, this IGBT is suitable for use in power factor correction, inverters, and motor drives across various industrial sectors.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 40A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 24ns/125ns |
| Switching Energy | 3.9mJ (on), 660µJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 85 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 115 A |
| Power - Max | 577 W |
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