IXYH40N120B4
IGBT DISCRETE TO-247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH40N120B4 from the XPT™, GenX4™ series is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This discrete IGBT features a collector-emitter voltage (Vce) breakdown of 1200 V and a continuous collector current (Ic) rating of 136 A, with a pulsed capability of 250 A. The device exhibits a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 32A collector current, and a maximum power dissipation of 680 W. Optimized switching characteristics include a typical turn-on delay of 19 ns and turn-off delay of 220 ns at 25°C, with a specified reverse recovery time (trr) of 53 ns. The gate charge is 94 nC. This IGBT is housed in a TO-247-3 package, suitable for through-hole mounting. It operates within an extended temperature range of -55°C to 175°C. This component is commonly employed in power supplies, motor control, and industrial automation systems.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 53 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 32A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 19ns/220ns |
| Switching Energy | 5.9mJ (on), 2.9mJ (off) |
| Test Condition | 960V, 32A, 5Ohm, 15V |
| Gate Charge | 94 nC |
| Current - Collector (Ic) (Max) | 136 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 680 W |
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