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IXYH30N65C3H1

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IXYH30N65C3H1

IGBT 650V 60A 270W TO247

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXYH30N65C3H1 is a 650V, 60A insulated gate bipolar transistor (IGBT) from the GenX3™, XPT™ series. This PT IGBT features a maximum collector power dissipation of 270W and a collector current of 60A, with a pulsed collector current of 118A. It has a low on-state voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 30A collector current. The gate charge is 44 nC, and switching times are specified as 21ns (turn-on) and 75ns (turn-off) at 25°C under test conditions of 400V, 30A, 10 Ohm, 15V. The device exhibits a reverse recovery time (trr) of 120ns and switching energies of 1mJ (on) and 270µJ (off). Operating temperature ranges from -55°C to 175°C. Packaged in a TO-247-3 through-hole configuration, this component is suitable for high-power applications in sectors such as industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)120 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Supplier Device PackageTO-247 (IXTH)
IGBT TypePT
Td (on/off) @ 25°C21ns/75ns
Switching Energy1mJ (on), 270µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge44 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)118 A
Power - Max270 W

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