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IXYH30N65B3D1

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IXYH30N65B3D1

IGBT PT 650V 70A TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYH30N65B3D1 is a high-performance Trench IGBT from the XPT™ and GenX3™ series. This component features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 70A, with a pulsed current rating of 160A. The Vce(on) is specified at 2.1V maximum at 15V gate drive and 30A collector current. Gate charge is 45 nC, and switching energies are 830µJ (on) and 640µJ (off) under the test condition of 400V, 30A, 10 Ohm, 15V. The device operates within an extended temperature range of -55°C to 175°C (TJ). Designed for through-hole mounting, it is housed in a TO-247-3 package. This IGBT is suitable for applications in power conversion and motor control.

Additional Information

Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)38 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
Supplier Device PackageTO-247 (IXYH)
IGBT TypePT
Td (on/off) @ 25°C17ns/87ns
Switching Energy830µJ (on), 640µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge45 nC
Current - Collector (Ic) (Max)70 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)160 A
Power - Max270 W

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