IXYH30N120C3
IGBT 1200V 75A 500W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH30N120C3 is a high-performance GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 75 A, with a pulsed capability of 145 A. It offers a maximum power dissipation of 500 W and a low on-state voltage of 3.3 V at 15 V gate drive and 30 A. Switching characteristics include typical on and off switching energies of 2.6 mJ and 1.1 mJ respectively, with turn-on and turn-off delays of 19 ns and 130 ns at 25°C, tested under 600 V, 30 A, 10 Ohm, and 15 V conditions. The gate charge is 69 nC. This IGBT is housed in a TO-247-3 package suitable for through-hole mounting and operates across an industrial temperature range of -55°C to 175°C. Applications include industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 30A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 19ns/130ns |
| Switching Energy | 2.6mJ (on), 1.1mJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 69 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 145 A |
| Power - Max | 500 W |
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