IXYH30N120B4
DISC IGBT XPT-GENX4 TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXYH30N120B4 is a high-performance XPT™, GenX4™ series discrete IGBT with a 1200V collector-emitter breakdown voltage. It offers a continuous collector current of 100A, with a pulsed capability of 174A. The IGBT features a low on-state voltage of 2.1V at 15V gate-emitter voltage and 25A collector current, and a maximum power dissipation of 500W. Key parameters include a 58nC gate charge and a reverse recovery time of 60ns. Switching energy characteristics are 4.4mJ (on) and 2.6mJ (off) at the specified test conditions. The IXYH30N120B4 is housed in a TO-247-3 package suitable for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This component is frequently utilized in power conversion applications across industrial, automotive, and renewable energy sectors.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/245ns |
| Switching Energy | 4.4mJ (on), 2.6mJ (off) |
| Test Condition | 960V, 25A, 5Ohm, 15V |
| Gate Charge | 58 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 174 A |
| Power - Max | 500 W |
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