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IXYH24N90C3D1

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IXYH24N90C3D1

IGBT 900V 44A 200W C3 TO-247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYH24N90C3D1 is a 900V, 44A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This component features a maximum continuous collector current (Ic) of 44A and a pulsed collector current (Icm) of 105A. With a low on-state voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 24A collector current, it offers efficient power dissipation with a maximum power rating of 200W. The device exhibits typical switching characteristics of 20ns turn-on delay and 73ns turn-off delay at 25°C junction temperature, with switching energies of 1.35mJ (on) and 400µJ (off). Reverse recovery time (trr) is specified at 340ns. The IXYH24N90C3D1 is housed in a TO-247-3 package suitable for through-hole mounting and operates within an extended temperature range of -55°C to 150°C. This IGBT is utilized in industrial applications requiring high-voltage switching capabilities.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)340 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 24A
Supplier Device PackageTO-247 (IXTH)
IGBT Type-
Td (on/off) @ 25°C20ns/73ns
Switching Energy1.35mJ (on), 400µJ (off)
Test Condition450V, 24A, 10Ohm, 15V
Gate Charge40 nC
Current - Collector (Ic) (Max)44 A
Voltage - Collector Emitter Breakdown (Max)900 V
Current - Collector Pulsed (Icm)105 A
Power - Max200 W

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