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IXYH24N170C

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IXYH24N170C

IGBT 1.7KV 58A TO247-3

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXYH24N170C is a high-voltage, high-efficiency XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This device offers a 1700 V collector-emitter breakdown voltage with a continuous collector current of 58 A and a pulsed collector current of 145 A. Featuring a maximum power dissipation of 500 W and a low on-state voltage of 3.8 V at 20 A and 15 V gate drive, it ensures efficient operation. The IGBT exhibits a gate charge of 96 nC and switching times of 12 ns (on) and 160 ns (off) at 25°C, with a reverse recovery time of 30 ns. Its TO-247-3 package with through-hole mounting facilitates robust thermal management. This component is suitable for use in renewable energy systems, industrial motor drives, and high-power switching power supplies.

Additional Information

Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)30 ns
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 20A
Supplier Device PackageTO-247 (IXYH)
IGBT Type-
Td (on/off) @ 25°C12ns/160ns
Switching Energy4.9mJ (on), 1.95mJ (off)
Test Condition960V, 30A, 15Ohm, 15V
Gate Charge96 nC
Current - Collector (Ic) (Max)58 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)145 A
Power - Max500 W

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