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IXYH20N65B3

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IXYH20N65B3

DISC IGBT XPT-GENX3 TO-247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXYH20N65B3, an XPT™, GenX3™ series Discrete IGBT, offers a 650V collector-emitter breakdown voltage and 58A continuous collector current (IC). This device features a robust TO-247AD package for through-hole mounting, capable of dissipating up to 230W. Key performance parameters include a typical Vce(on) of 2.1V at 15V gate voltage and 20A collector current, with a 29nC gate charge. Switching characteristics are defined by a 25ns reverse recovery time (trr) and switching energies of 500µJ (on) and 450µJ (off) under specified test conditions (400V, 20A, 20O, 15V). The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in power factor correction, motor drive, and industrial power supplies.

Additional Information

Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C12ns/103ns
Switching Energy500µJ (on), 450µJ (off)
Test Condition400V, 20A, 20Ohm, 15V
Gate Charge29 nC
Current - Collector (Ic) (Max)58 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)108 A
Power - Max230 W

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