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IXYH20N120C3D1

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IXYH20N120C3D1

IGBT 1200V 36A 230W TO-247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYH20N120C3D1 is a 1200V, 36A insulated gate bipolar transistor (IGBT) from the GenX3™, XPT™ series. This component features a maximum collector current of 36A, with a pulsed capability of 88A. Its low on-state voltage (Vce(on)) is a maximum of 3.4V at 15V gate-emitter voltage and 20A collector current, under test conditions of 600V and 20A. The device offers a switching energy of 1.3mJ for turn-on and 500µJ for turn-off, with typical switching times of 20ns (on) and 90ns (off) at 25°C. With a maximum power dissipation of 230W and a gate charge of 53nC, this IGBT is housed in a TO-247-3 package suitable for through-hole mounting. It is designed for operation across a wide temperature range of -55°C to 150°C. Applications include power supplies, motor control, and industrial automation systems.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)195 ns
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Supplier Device PackageTO-247 (IXTH)
IGBT Type-
Td (on/off) @ 25°C20ns/90ns
Switching Energy1.3mJ (on), 500µJ (off)
Test Condition600V, 20A, 10Ohm, 15V
Gate Charge53 nC
Current - Collector (Ic) (Max)36 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)88 A
Power - Max230 W

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