IXYH20N120C3
IGBT 1200V 40A 278W TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH20N120C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 96 A. It offers a maximum power dissipation of 278 W and a low on-state voltage (Vce(on)) of 3.4 V at 15 V gate-emitter voltage and 20 A collector current. Typical switching times are 20 ns turn-on and 90 ns turn-off at 25°C, with associated switching energies of 1.3 mJ (on) and 500 µJ (off) under specified test conditions. The device is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C. Applications include power factor correction, motor control, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/90ns |
| Switching Energy | 1.3mJ (on), 500µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 278 W |
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