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IXYH16N170CV1

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IXYH16N170CV1

IGBT 1.7KV 40A TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYH16N170CV1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) from the XPT™ series. This NPT IGBT features a collector-emitter voltage rating of 1700 V and a continuous collector current capability of 40 A, with a pulsed capability of 100 A. Designed for demanding applications, it offers a maximum power dissipation of 310 W. The device exhibits a low on-state voltage drop of 3.8 V at 15 V gate-emitter voltage and 16 A collector current, with a gate charge of 56 nC. Switching characteristics include turn-on delay (Td(on)) of 11 ns and turn-off delay (Td(off)) of 140 ns at 25°C, along with switching energies of 2.1 mJ (on) and 1.5 mJ (off) under test conditions of 850 V, 16 A, 10 Ohm, and 15 V. The IXYH16N170CV1 is packaged in a TO-247-3 through-hole configuration, suitable for operation across a wide temperature range of -55°C to 175°C. This component is commonly utilized in high-power industrial applications such as power supplies, motor drives, and renewable energy systems.

Additional Information

Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)150 ns
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 16A
Supplier Device PackageTO-247 (IXYH)
IGBT Type-
Td (on/off) @ 25°C11ns/140ns
Switching Energy2.1mJ (on), 1.5mJ (off)
Test Condition850V, 16A, 10Ohm, 15V
Gate Charge56 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)100 A
Power - Max310 W

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